Title :
Investigation on the properties and processability of polymeric insulation layers for through silicon via
Author :
Songfang Zhao ; Guoping Zhang ; Chongnan Peng ; Rong Sun ; Lee, S. W. Ricky ; Wenhui Zhu ; Fangqi Lai
Author_Institution :
Shenzhen Inst. of Adv. Technol., Shenzhen, China
Abstract :
3D packaging using through silicon via (TSV) technology is becoming important in IC packaging industry. In this paper, the TSV process uses a polymeric liner as insulation material and a buffer for thermo-mechanical stress relaxation. Fourier transform infrared spectroscopy (FTIR), thermogravimetry analysis (TGA), differential scanning calorimetry (DSC), dielectric and contact angle tests are applied to select a suitable dielectric from two kinds of polymers. All the properties show that the linear o-crosel phenolic (LOPF) is suitable for acting as an insulation liner in the TSV process. Then the LOPF liquid is spun on the wafer, followed by soft baking at the temperature of 115 °C, the processed wafer is inspected using optical microscope, step profiler and scanning electron microscope (SEM). All the results indicate that LOPF has good potential to be the insulation layers for TSV.
Keywords :
Fourier transform spectroscopy; differential scanning calorimetry; infrared spectroscopy; integrated circuit packaging; polymer insulators; scanning electron microscopy; three-dimensional integrated circuits; 3D packaging; Fourier transform infrared spectroscopy; IC packaging industry; LOPF liquid; TSV process; contact angle tests; differential scanning calorimetry; insulation liner; insulation material; linear o-crosel phenolic; optical microscope; polymeric insulation layers; polymeric liner; scanning electron microscope; soft baking; step profiler; temperature 115 C; thermo-mechanical stress relaxation; thermogravimetry analysis; through silicon via; Dielectrics; Insulation; Liquids; Plastics; Silicon; Thermal stability; Through-silicon vias;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4799-0233-0
DOI :
10.1109/ECTC.2013.6575554