DocumentCode :
628369
Title :
A novel non-TSV approach to enhancing the bandwidth in 3-D packages for processor-memory modules
Author :
Gupta, Deepika
Author_Institution :
APSTL llc, Scottsdale, AZ, USA
fYear :
2013
fDate :
28-31 May 2013
Firstpage :
124
Lastpage :
128
Abstract :
We describe here an alternative 3-D chip stacking technology under development at APSTL that delivers the performance enhancement possible with TSVs (e, g. bandwidth of 12.8 GB/sec, specific I/O power consumption reduced by 10× to 100 mW/GB/sec) without having to create TSVs in the functional chips themselvesA. The resulting module can be tested/packaged into conventional 3-D packages e.g. PiP or PoP using technologies in place at OSATs. This feat has been achieved by adding low-cost compensatory features to individual interconnect lines which allow raising the clock rate even in conventional packages. Simulation results will be presented to establish that up to a I/O clock rate of 800 MHz (2× current in SmartPhones & Tablets) the output from this new low - cost package is identical to that from TSV modules. Physical package design and test/assembly sequences will be discussed. With this novel approach that leverages only current technologies to improve inter - chip bandwidth and power consumption, performance limits of existing 3-D stacked packages e, g. PoP and PiP have been removed and these established low-cost packages have been made competitive with 3D - TSV packages for several future generations of chips intended for SmartPhones & Tablets.
Keywords :
DRAM chips; UHF integrated circuits; assembling; clocks; integrated circuit design; integrated circuit interconnections; integrated circuit packaging; integrated circuit testing; modules; system-on-chip; three-dimensional integrated circuits; 3D chip stacking technology; 3D packaging; APSTL; DRAM; I-O clock rate; OSAT; PiP; PoP; SoC; frequency 800 MHz; integrated circuit interconnection; interchip bandwidth enhancement; nonTSV approach; physical package design; power consumption; processor-memory module; smartphone; specific I-O power consumption; system-on-chip; tablet; test-assembly sequence; Bandwidth; Capacitance; Clocks; Integrated circuit interconnections; Smart phones; Substrates; System-on-chip;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
ISSN :
0569-5503
Print_ISBN :
978-1-4799-0233-0
Type :
conf
DOI :
10.1109/ECTC.2013.6575561
Filename :
6575561
Link To Document :
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