DocumentCode :
628377
Title :
Effects of reliability testing methods on microstructure and strength at the Cu wire-Al pad interface
Author :
Peng Su ; Seki, Hiroshi ; Chen Ping ; Itoh, Shintaro ; Huang, Liwen ; Liao, Niteng ; Liu, B. ; Chen, Ci ; Tai, Wei-Hsiu ; Tseng, Andy
fYear :
2013
fDate :
28-31 May 2013
Firstpage :
179
Lastpage :
185
Abstract :
As the adoption of Cu bond wires continues, increasing quantity of component families are being qualified by component suppliers using standard acceleration test methods and durations. While these tests provide a benchmark comparison with conventional technologies such as Au wire bonding, for users of these components for high-reliability applications, a frequent discussion on reliability assessment is which particular test would be the most practical or effective in detecting material and process issues. In this work, we evaluate the effects of bond wire material and process variations using three acceleration tests including autoclave, unbiased HAST, and biased-HAST. Both bare Cu and Pd-coated Cu wires are included and process variations are also introduced. The results from the acceleration tests and microstructure analysis of the failed components will offer insight into the effectiveness of these acceleration tests and responses of the various bond wire materials and bond processes.
Keywords :
acceleration; aluminium; copper; crystal microstructure; lead bonding; semiconductor device reliability; semiconductor device testing; Al; Cu; acceleration testing; autoclave; biased-HAST; component suppliers; high-reliability applications; microstructure analysis; reliability testing method effect; standard acceleration test methods; unbiased HAST; wire material bonding; wire-pad interface; Acceleration; Bonding; Materials; Standards; Testing; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
ISSN :
0569-5503
Print_ISBN :
978-1-4799-0233-0
Type :
conf
DOI :
10.1109/ECTC.2013.6575569
Filename :
6575569
Link To Document :
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