Use of RF-based technique as a metrology tool for TSV reliability analysis

Author

Okoro, Chukwudi ; Kabos, P. ; Obrzut, Jan ; Hummler, Klaus ; Obeng, Yaw S.

Author_Institution

Semicond. & Dimensional Metrol. Div., Gaithersburg, MD, USA

fYear

2013

fDate

28-31 May 2013

Firstpage

186

Lastpage

191

Abstract

In this work, radio frequency (RF) based measurement technique is used as a prognostic tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrity in TSV daisy chains degraded with thermal cycling. Focused ion beam (FIB) based failure analysis, showed that the root cause for this trend was due to the formation and propagation of voids with thermal cycling.

Keywords

failure analysis; focused ion beam technology; integrated circuit reliability; radiofrequency integrated circuits; three-dimensional integrated circuits; FIB based failure analysis; RF signal integrity; RF-based technique; TSV daisy chains; TSV reliability analysis; focused ion beam based failure analysis; metrology tool; prognostic tool; radio frequency based measurement technique; thermal cycling; through-silicon via stacked dies; voids formation; voids propagation; Metals; Radio frequency; Reliability; Silicon; Stress; Thermal analysis; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd

Conference_Location

Las Vegas, NV

ISSN

0569-5503

Print_ISBN

978-1-4799-0233-0

Type

conf

DOI

10.1109/ECTC.2013.6575570

Filename

6575570