DocumentCode :
628398
Title :
Interposer technology for high band width interconnect applications
Author :
Detalle, Mikael ; La Manna, A. ; De Vos, J. ; Nolmans, P. ; Daily, R. ; Civale, Y. ; Beyer, G. ; Beyne, Eric
Author_Institution :
Imec, Leuven, Belgium
fYear :
2013
fDate :
28-31 May 2013
Firstpage :
323
Lastpage :
328
Abstract :
Silicon Interposer provides very high density interconnect combining through Silicon vias and fine wiring. The concept reported in this paper is implementing integrated power supply layers with decoupling metal insulator metal decoupling capacitor to enhance signal integrity. In addition an upscale damascene process was used to fabricate high density and high bandwidth routing interconnect. A detailed characterization of the warpage behavior along the processing steps and electrical characterization of interposer TSV and BEOL are reported.
Keywords :
capacitors; integrated circuit interconnections; network routing; signal processing; three-dimensional integrated circuits; BEOL; TSV; damascene back end of line technology; decoupling metal insulator metal decoupling capacitor; electrical characterization; fine wiring; high bandwidth routing interconnect; integrated power supply layers; interposer technology; processing steps; signal integrity enhancement; through silicon vias; upscale damascene process; warpage behavior; Capacitance; Capacitors; Electrodes; Insulators; Metals; Silicon; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
ISSN :
0569-5503
Print_ISBN :
978-1-4799-0233-0
Type :
conf
DOI :
10.1109/ECTC.2013.6575590
Filename :
6575590
Link To Document :
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