• DocumentCode
    628402
  • Title

    Development of Through Glass Via (TGV) formation technology using electrical discharging for 2.5/3D integrated packaging

  • Author

    Takahashi, Satoshi ; Horiuchi, Keisuke ; Tatsukoshi, Kentaro ; Ono, M. ; Imajo, Nobuhiko ; Mobely, Tim

  • Author_Institution
    Asahi Glass Co., Ltd., Tokyo, Japan
  • fYear
    2013
  • fDate
    28-31 May 2013
  • Firstpage
    348
  • Lastpage
    352
  • Abstract
    This study explored Through Glass Via (TGV) Formation Technology by using Focused Electrical Discharging Method for alkali-fee glass which has well matched CTE with Si. 2.5D/3D Packaging has presently attracted lots of attention, an interposer is recognized as one of key materials, and its development of new fine pitch, high dense, and low cost interposer are accelerated. Glass is expected as one of candidates as a substrate material of future interposer substrate. This study demonstrates TGV formation showed capabilities of fine pitch and high dense, and TGV formation for standard thick glass aiming varied applications for packaging such as MEMS, Optical device, and RF device. This study discussed further challenges related to metalization technique and carrying methods for glass interposer. Necessary future development and subjects were pointed out.
  • Keywords
    discharges (electric); elemental semiconductors; glass; integrated circuit metallisation; integrated circuit packaging; silicon; 2.5D integrated packaging; 3D integrated packaging; CTE; MEMS; RF device; Si; TGV formation; alkali-fee glass; carrying methods; fine pitch; focused electrical discharging method; glass interposer; interposer substrate; metalization technique; optical device; standard thick glass; substrate material; through glass via formation technology; Glass; Packaging; Shape; Silicon; Standards; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
  • Conference_Location
    Las Vegas, NV
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4799-0233-0
  • Type

    conf

  • DOI
    10.1109/ECTC.2013.6575594
  • Filename
    6575594