Title :
High refractive index and transparency nanocomposites as encapsulant for high brightness LED packaging
Author :
Yan Liu ; Ziyin Lin ; Xueying Zhao ; Kyoung-sik Moon ; Sehoon Yoo ; Choi, Jang-Young ; Wong, C.P.
Author_Institution :
Sch. of Mater. Sci. & Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Improving the light extraction efficiency is one of the key technologies for high brightness LED packaging, and is of great importance for the semiconductor illumination industry. Due to the large refractive index (RI) difference between LED chip and outside medium, the light will be trapped in the LED, convert into heat, and further lower the conversion efficiency. Encapsulants such as epoxy and silicone are usually added to decrease the RI contrast and increase the angle of light escape cone. But the RI is usually limited to 1.45 to 1.55. Higher RI particles can be added to further increase the RI of LED encapsulant. The particle size should be controlled smaller than one tenth of the visible light wavelength, in order to reduce Rayleigh scattering. In this study, we prepared TiO2 nanoparticles/silicone nanocomoposites as LED encapsulant. The dispersion of nanoprticles was further improved through silane treatment. As a result, the RI of nanocomposites increased from 1.54 to 1.62 at 589 nm wavelength with 5 wt% filler loading while maintaining high relative transmittance.
Keywords :
brightness; encapsulation; light emitting diodes; lighting; nanocomposites; packaging; refractive index; semiconductor industry; LED encapsulant; RI contrast; Rayleigh scattering; conversion efficiency; epoxy; high brightness LED packaging; high refractive index; high relative transmittance; light extraction efficiency; nanoparticles-silicone nanocomoposite; semiconductor illumination industry; silane treatment; transparency nanocomposites; visible light wavelength; Dispersion; Light emitting diodes; Loading; Nanocomposites; Polymers; Refractive index;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4799-0233-0
DOI :
10.1109/ECTC.2013.6575627