DocumentCode :
628440
Title :
Low-cost micrometer-scale silicon vias (SVs) fabrication by metal-assisted chemical etching (MaCE) and carbon nanotubes (CNTs) filling
Author :
Liyi Li ; Yagang Yao ; Ziyin Lin ; Yan Liu ; Wong, C.P.
Author_Institution :
Mater. Sci. & Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2013
fDate :
28-31 May 2013
Firstpage :
581
Lastpage :
585
Abstract :
A low cost etching method, metal-assisted chemical etching (MaCE), was used to successfully etching 30 μm-diameter silicon vias (SVs), of which the quality are comparable to those fabricated by deep reactive ion etching (DRIE) method. A novel carbon nanomaterial filling method was developed based on chemical vapor deposition (CVD) technique. The influence of preparation of CVD catalyst on the quality of filling materials was compared and discussed.
Keywords :
carbon nanotubes; catalysts; chemical vapour deposition; etching; filling; metals; microfabrication; sputter etching; three-dimensional integrated circuits; CNT filling materials; CVD catalyst; CVD technique; DRIE method; MaCE; SV fabrication; TSV; carbon nanotubes filling method; chemical vapor deposition technique; deep reactive ion etching method; low-cost micrometer-scale silicon via fabrication; metal-assisted chemical etching; Aluminum oxide; Carbon nanotubes; Etching; Filling; Gold; Iron; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
ISSN :
0569-5503
Print_ISBN :
978-1-4799-0233-0
Type :
conf
DOI :
10.1109/ECTC.2013.6575632
Filename :
6575632
Link To Document :
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