DocumentCode :
628506
Title :
Effect of NCFs with Zn-nanoparticles on the interfacial reactions of 40 um pitch Cu pillar/Sn-Ag bump for TSV interconnection
Author :
Ji-won Shin ; Yong-Won Choi ; Young Soon Kim ; Un Byung Kang ; Young Kun Jee ; Kyung-Wook Paik
Author_Institution :
Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
fYear :
2013
fDate :
28-31 May 2013
Firstpage :
1024
Lastpage :
1030
Abstract :
NCFs with Zn-nanoparticles of different resin acidity, resin viscosity, resin curing speed were formulated, and diffused Zn contents in the solder bumps were measured after reflow. Amount of Zn diffusion into the solder bumps increased as resin acidity increased, as resin viscosity decreased, as curing speed decreased, and as reflow temperature increased. Diffusion of Zn nano-particles into the solder bumps are maximized when flow-able resin viscosity and break of oxides are achieved. To analyze the effect of Zn on IMC reduction, NCFs with 0 wt%, 1 wt%, 5 wt%, and 10 wt% of Zn nano-particles were bonded on the test vehicles, and aged at 150°C up to 500 hours. NCF with 10wt% Zn nano-particle showed remarkable suppression in Cu6Sn5 and (Cu, Ni)6Sn5 IMC compared to NCFs with 0 wt%, 1 wt%, and 5 wt% of Zn nano-particles. However, in terms of Cu3Sn IMC suppression, NCFs with 1 wt%, 5wt%, and 10wt% showed an equal amount of IMC suppression.
Keywords :
copper alloys; curing; integrated circuit interconnections; integrated circuit packaging; nickel alloys; reflow soldering; resins; three-dimensional integrated circuits; zinc; Cu; Cu pillar; Cu3Sn; Cu6Sn5; IMC suppression; NCF; Ni6Sn5; Sn-Ag; Sn-Ag bump; TSV interconnection; Zn; Zn diffusion; Zn-nanoparticle; interfacial reaction; nonconductive film; reflow temperature; resin acidity; resin curing speed; resin viscosity; size 40 micron; solder bumps; solder reflow; temperature 150 C; Curing; Resins; Temperature dependence; Through-silicon vias; Tin; Viscosity; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
ISSN :
0569-5503
Print_ISBN :
978-1-4799-0233-0
Type :
conf
DOI :
10.1109/ECTC.2013.6575698
Filename :
6575698
Link To Document :
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