DocumentCode
628507
Title
Advanced in situ characterization of TIM1 reliability
Author
Peng Li ; Yongmei Liu ; La Mar, Alfred ; Goyal, Deepak
Author_Institution
Intel Corp., Chandler, AZ, USA
fYear
2013
fDate
28-31 May 2013
Firstpage
1031
Lastpage
1036
Abstract
Innovative in situ Environmental Scanning Electron Microscope (ESEM) hot stage metrology was developed to understand packaging process and failure mechanisms through elevated temperature. For solder thermal interface materials (STIM), AuIn2 intermetallic compound (IMC) spallation during indium melting is proposed to explain its formation mechanism correlated to STIM thermal degradation. For the first time, AuIn2 IMC spallation is validated by direct observation of its dynamic behavior at elevated temperature using in situ ESEM hot stage metrology. In situ ESEM hot stage study also demonstrates that package dynamic warpage is a key contributor for corner delamination of polymer thermal interface materials (PTIM). It is found that the force applied with heatsink at the platform level helps to alleviate the risk of PTIM delamination. Application of in situ ESEM hot stage metrology to predicting package thermal performance and understanding package dynamic warpage induced failures are discussed.
Keywords
delamination; electronics packaging; failure analysis; gold alloys; heat sinks; indium alloys; melting; polymers; reliability; scanning electron microscopes; soldering; thermal management (packaging); AuIn2; ESEM hot stage metrology; IMC spallation; PTIM delamination; STIM thermal degradation; TIM1 reliability; advanced in situ characterization; dynamic warpage package; failure mechanisms; in situ environmental scanning electron microscope hot stage metrology; intermetallic compound spallation; packaging process; polymer thermal interface materials; solder thermal interface materials; Degradation; Delamination; Indium; Liquids; Metrology; Temperature measurement; Thermal degradation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location
Las Vegas, NV
ISSN
0569-5503
Print_ISBN
978-1-4799-0233-0
Type
conf
DOI
10.1109/ECTC.2013.6575699
Filename
6575699
Link To Document