• DocumentCode
    628570
  • Title

    TSV development, characterization and modeling for 2.5-D interposer applications

  • Author

    Tenailleau, J.-R. ; Brunet, A. ; Borel, S. ; Voiron, Frederic ; Bunel, C.

  • Author_Institution
    IPDIA, Caen, France
  • fYear
    2013
  • fDate
    28-31 May 2013
  • Firstpage
    1439
  • Lastpage
    1445
  • Abstract
    IPDiA presents itself as the 3-D silicon leader providing innovative platforms for customers who want to demonstrate technological concepts based on TSV (Through Silicon Vias). The market segments Medical, Lighting, and Industrial addressed by the IPDiA Technology are adopting 2.5-D and 3-D technologies to increase the performances and density of their devices through the use of silicon interposers and TSV. Such devices can provide smaller form factors and lower power consumption while offering benefits such as allowing manufacturers to combine heterogeneous technologies. The via last approach jointly developed by IPDiA and CEA-Leti allows large possibility of integration combining TSV with active or passive devices. This paper focuses on the key process steps, the method used for modeling. The electrical performances are described and the models extracted and used to predict performances of the customer products are presented. Preliminary reliability results are also shown. In the last part, 3 applicative cases are studied to understand the TSV electrical behavior on its nearby environment in silicon and the potential impact on devices integrated in the same interposer.
  • Keywords
    innovation management; power consumption; three-dimensional integrated circuits; IPDiA technology; TSV characterization; TSV development; TSV modeling; innovative platforms; interposer applications; power consumption; through silicon vias; Capacitance; Copper; Etching; Mathematical model; Silicon; Through-silicon vias; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
  • Conference_Location
    Las Vegas, NV
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4799-0233-0
  • Type

    conf

  • DOI
    10.1109/ECTC.2013.6575762
  • Filename
    6575762