DocumentCode
628580
Title
Outgassing characterization of MEMS thin film packaging materials
Author
Savornin, B. ; Baillin, X. ; Blanquet, E. ; Nuta, I. ; Saint Patrice, D. ; Nicolas, Pierre ; Charvet, P.L. ; Pornin, J.L.
Author_Institution
LETI, CEA, Grenoble, France
fYear
2013
fDate
28-31 May 2013
Firstpage
1514
Lastpage
1518
Abstract
In the field of MEMS packaging technology the pressure limit inside the cavity is a crucial parameter. As the cavity size becomes smaller and smaller the vacuum is mainly affected by the outgassing of the materials used in the fabrication process. A full characterization of this phenomenon for oxides that can be integrated as encapsulation layer is presented in this study. A combination of dynamic outgassing, Residual Gas Analysis (RGA) and thermodynamic simulations is involved to fully investigate the material outgassing behavior. The temperature and the nature of released gases are evaluated indicating the optimal annealing or other cleaning process before the sealing of cavities. Moreover the combination of these oxides with a getter material is analyzed. The affinity between carbon dioxide, nitrogen, hydrogen and the getter material is demonstrated as well as its non-reactivity with hydrocarbons. The pressure inside the cavity can be efficiently decreased by integrating this pumping material. Therefore a selection of materials and new fabrication processes can be considered using those results.
Keywords
annealing; encapsulation; micromechanical devices; outgassing; thermodynamics; thin films; MEMS packaging materials; RGA; annealing; carbon dioxide; dynamic outgassing; encapsulation layer; hydrogen; nitrogen; pumping material; residual gas analysis; thermodynamic simulations; thin film packaging materials; Gettering; Hydrogen; Micromechanical devices; Nitrogen; Packaging; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location
Las Vegas, NV
ISSN
0569-5503
Print_ISBN
978-1-4799-0233-0
Type
conf
DOI
10.1109/ECTC.2013.6575772
Filename
6575772
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