Title :
Cu/Sn SLID wafer-level bonding optimization
Author :
Thi-Thuy Luu ; Duan, Ani ; Kaiying Wang ; Aasmundtveit, Knut ; Hoivik, Nils
Author_Institution :
Dept. of Micro & Nano Technol., Vestfold Univ. Coll., Borre, Norway
Abstract :
The objective of this study is to optimize the Cu/Sn solid liquid bonding process, which is an attractive technique for wafer-level MEMS packaging and encapsulation. In order to optimize the bonding process, the effect of bonding temperature profile, initial Sn layer thickness and bond pressure are investigated and discussed. Bond performance is characterized by sealing yield, dicing yield and cross section analysis of the bond interface. With correct design of Cu/Sn layer thickness and temperature profile, high bond yield at bond temperature 270°C and 250°C was obtained.
Keywords :
bonding processes; copper alloys; encapsulation; optimisation; seals (stoppers); tin alloys; wafer level packaging; Cu-Sn; Cu-Sn SLID; Sn layer thickness; bond interface; bonding temperature profile; cross section analysis; dicing yield; encapsulation; sealing yield; solid liquid bonding process; temperature 250 degC; temperature 270 degC; wafer-level MEMS packaging; wafer-level bonding optimization; Bonding; Etching; Force; Gold; Thickness measurement; Tin;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4799-0233-0
DOI :
10.1109/ECTC.2013.6575775
