DocumentCode
628711
Title
TSV electrical and mechanical modeling for thermo-mechanical delamination
Author
Kannan, Kalapriya ; Kannan, S. ; Kim, Bumki ; Sitaraman, Srikrishna ; Burkett, Susan
Author_Institution
Univ. of Alabama, Tuscaloosa, AL, USA
fYear
2013
fDate
28-31 May 2013
Firstpage
2298
Lastpage
2303
Abstract
This paper presents the electrical modeling of thermo-mechanical delamination in TSVs, such as circumferential and interfacial cracks. Two-dimensional mechanical finite element models were built to analyze the stress distribution in TSV structures. Abaqus simulations were performed to compute the energy release rate at the crack when stress is applied and to track the propagation of cracks over different thermal cycles. The mechanical models were then translated to electrical defect models, to evaluate the electrical performance of TSVs with delaminations.
Keywords
cracks; delamination; elemental semiconductors; finite element analysis; integrated circuit modelling; silicon; stress analysis; three-dimensional integrated circuits; Abaqus simulation; Si; TSV electrical modeling; TSV mechanical modeling; TSV structures; circumferential cracks; crack propagation; electrical defect model; energy release rate; interfacial cracks; stress distribution; thermal cycle; thermomechanical delamination; two-dimensional mechanical finite element model; Circuit faults; Delamination; Integrated circuit modeling; Radio frequency; Substrates; Thermomechanical processes; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location
Las Vegas, NV
ISSN
0569-5503
Print_ISBN
978-1-4799-0233-0
Type
conf
DOI
10.1109/ECTC.2013.6575904
Filename
6575904
Link To Document