• DocumentCode
    628711
  • Title

    TSV electrical and mechanical modeling for thermo-mechanical delamination

  • Author

    Kannan, Kalapriya ; Kannan, S. ; Kim, Bumki ; Sitaraman, Srikrishna ; Burkett, Susan

  • Author_Institution
    Univ. of Alabama, Tuscaloosa, AL, USA
  • fYear
    2013
  • fDate
    28-31 May 2013
  • Firstpage
    2298
  • Lastpage
    2303
  • Abstract
    This paper presents the electrical modeling of thermo-mechanical delamination in TSVs, such as circumferential and interfacial cracks. Two-dimensional mechanical finite element models were built to analyze the stress distribution in TSV structures. Abaqus simulations were performed to compute the energy release rate at the crack when stress is applied and to track the propagation of cracks over different thermal cycles. The mechanical models were then translated to electrical defect models, to evaluate the electrical performance of TSVs with delaminations.
  • Keywords
    cracks; delamination; elemental semiconductors; finite element analysis; integrated circuit modelling; silicon; stress analysis; three-dimensional integrated circuits; Abaqus simulation; Si; TSV electrical modeling; TSV mechanical modeling; TSV structures; circumferential cracks; crack propagation; electrical defect model; energy release rate; interfacial cracks; stress distribution; thermal cycle; thermomechanical delamination; two-dimensional mechanical finite element model; Circuit faults; Delamination; Integrated circuit modeling; Radio frequency; Substrates; Thermomechanical processes; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
  • Conference_Location
    Las Vegas, NV
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4799-0233-0
  • Type

    conf

  • DOI
    10.1109/ECTC.2013.6575904
  • Filename
    6575904