${\rm Ga}_{2}{\rm O}_{3}$ Nanowire Photodetector Prepared on ${\rm SiO}_{2}/{\rm Si}$ Templ

The authors report the growth of β-Ga₂O₃ nanowires using a vapor phase transport method on SiO₂/Si template. It is found that average diameter, average length, and density of the nanowires all increased as we increase the growth temperature. β-Ga₂O₃ nanowire solar-blind photodetectors with a sharp cutoff at 255 nm are also fabricated. With an incident light wavelength of 255 nm and an applied bias of 5 V, it is found that measured responsivity of the photodetector prepared at 950°C is 3.43×10₂O₃ A/W.