Performance comparison of 4H-SiC mesfets

Author

Prasad, D. Anil ; Komaragiri, Rama

Author_Institution

Dept. of Electron. & Commun. Eng., NIT Calicut, Calicut, India

fYear

2013

fDate

4-6 June 2013

Firstpage

1

Lastpage

5

Abstract

In this paper, effect of surface on breakdown voltage characteristics using 2-D Synopsys Sentaurus TCAD simulation were studied by comparing different surface structures of 4H-SiC MESFETs such as Non-recessed, channel-recessed, Non-recessed buried-gate and channel-recessed buried-gate structures. On current (I_ON) and off current (I_oFF) characteristics of all structures are studied. Buried gate structure with channel recess showed highest breakdown voltage compared to all other structures but with low on current (I_ON). In addition, the effect of depth of buried region and length of gate on breakdown voltage characteristics is studied.

Keywords

Schottky gate field effect transistors; electric breakdown; silicon compounds; technology CAD (electronics); 2D Synopsys Sentaurus TCAD simulation; 4H-SiC MESFET; breakdown voltage; performance comparison; Breakdown voltage; Doping; Electric fields; Logic gates; MESFETs; Silicon carbide; Threshold voltage; 4H-SiC MESFET; Breakdown voltage; Buried-gate; Channel-recessed MESFET; Non-recessed MESFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Research Areas and 2013 International Conference on Microelectronics, Communications and Renewable Energy (AICERA/ICMiCR), 2013 Annual International Conference on

Conference_Location

Kanjirapally

Print_ISBN

978-1-4673-5150-8

Type

conf

DOI

10.1109/AICERA-ICMiCR.2013.6575965

Filename

6575965