• DocumentCode
    628871
  • Title

    CMOS-MEMS technology with front-end surface etching of sacrificial SiO2 dedicated for acoustic devices

  • Author

    Esteves, Jorge ; Rufer, Libor ; Basrour, Skandar ; Ekeom, D.

  • Author_Institution
    TIMA Lab., UJF, Grenoble, France
  • fYear
    2013
  • fDate
    13-14 June 2013
  • Firstpage
    154
  • Lastpage
    159
  • Abstract
    In this work, we will present results showing a feasibility of a MEMS microphone, based on AMS 0.35 μm CMOS standard process, with only one step of a sacrificial SiO2 maskless etching on the substrate front-side. The microphone design, modeling and simulated performance will be studied. Fabrication of test structures obtained with a SiO2 etching will be shown as well as characterizations of these test structures.
  • Keywords
    CMOS integrated circuits; etching; microfabrication; micromechanical devices; microphones; silicon compounds; AMS CMOS standard process; CMOS-MEMS technology; MEMS microphone design; SiO2; acoustic devices; front-end surface etching; maskless etching; size 0.35 mum; substrate front-side; Acoustics; Damping; Etching; Force; Metals; Micromechanical devices; Microphones; Acoustic MEMS; CMOS-MEMS Technology; Front-end Surface Etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advances in Sensors and Interfaces (IWASI), 2013 5th IEEE International Workshop on
  • Conference_Location
    Bari
  • Print_ISBN
    978-1-4799-0039-8
  • Type

    conf

  • DOI
    10.1109/IWASI.2013.6576073
  • Filename
    6576073
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=628871