• DocumentCode
    629129
  • Title

    Enhancing SRAM performance by advanced FinFET device and circuit technology collaboration for 14nm node and beyond

  • Author

    Endo, Kazuhiro ; O´uchi, Shin-ichi ; Matsukawa, T. ; Liu, Yanbing ; Sakamoto, Kazumitsu ; Mizubayashi, W. ; Migita, S. ; Morita, Yusuke ; Ota, Hiroyuki ; Suzuki, Einoshin ; Masahara, M.

  • Author_Institution
    Nanoelectron. Res. Inst., Tsukuba, Japan
  • fYear
    2013
  • fDate
    11-13 June 2013
  • Abstract
    This paper presents a high performance and highly reliable SRAM realized by collaboration between advanced FinFET device and circuit technology. As for the device technology, the amorphous metal gate FinFET with the record smallest AVt value (=1.34 mVμm) are demonstrated. As for the circuit technology, it is demonstrated that both reliability and performance of SRAM are dramatically enhanced by introducing the independent-double-gate (IDG) FinFET.
  • Keywords
    MOSFET; SRAM chips; reliability; IDG FinFET; SRAM; advanced FinFET device; amorphous metal gate FinFET; circuit technology; independent-double-gate FinFET; reliability; size 14 nm; FinFETs; Logic gates; Noise; Performance evaluation; SRAM cells; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2013 Symposium on
  • Conference_Location
    Kyoto
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4673-5226-0
  • Type

    conf

  • Filename
    6576628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=629129