Title :
Time of flight image sensor with 7um pixel and 640×480 resolution
Author :
Seounghyun Kim ; Seungwon Cha ; Heewoo Park ; Jooyeong Gong ; Yohwan Noh ; Wanghyun Kim ; Seunghoon Lee ; Dong-Ki Min ; Wonjoo Kim ; Tae-Chan Kim ; EunSeung Jung
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Ltd., Hwasung, South Korea
Abstract :
Time of flight (ToF) sensor with pixel size of 7×7um and VGA resolution is developed using a backside illumination (BSI) structure. Quantum efficiency (QE) of near infrared (NIR) light is improved dramatically by applying thick epitaxial layer, reflection metal and anti-reflection layer. The depth error ranges are 2cm and 10cm at 90% and 10% reflection condition at the distance of 7m, respectively.
Keywords :
epitaxial layers; image resolution; image sensors; BSI structure; NIR light; QE; ToF sensor; VGA resolution; antireflection layer; backside illumination structure; depth error; distance 7 m; near infrared light; quantum efficiency; reflection condition; reflection metal; thick epitaxial layer; time of flight image sensor; Adaptive optics; Image sensors; Light emitting diodes; Metals; Optical sensors; Reflection; Silicon;
Conference_Titel :
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-5226-0
