DocumentCode :
629137
Title :
A MEMS-based charge pump
Author :
Yang Lin ; Wei-Chang Li ; Nguyen, Clark T.-C
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA
fYear :
2013
fDate :
11-13 June 2013
Abstract :
A micro-scale mechanical charge pump, cf., comprising a circuit of micromechanical resonant switches (a.k.a., resoswitches) has been demonstrated that generates 3V and 9V from 1V and 3V power supplies, respectively, using a 2-stage design; and 6V from 1V supply using a 5-stage design; all while avoiding the diode voltage drop and breakdown voltage limitations of conventional CMOS-based charge pumps. This MEMS-based charge pump additionally accepts a much wider input voltage range than semiconductor technology and obviates the need for custom high voltage CMOS for applications where large voltages are needed, e.g., MEMS-based timing references, thereby allowing the use of virtually any CMOS process for a wide variety of MEMS-based products.
Keywords :
CMOS integrated circuits; charge pump circuits; electric breakdown; electric potential; integrated circuit design; micromechanical resonators; microswitches; timing circuits; 2-stage design; 5-stage design; MEMS-based charge pump; MEMS-based timing reference; breakdown voltage limitation; conventional CMOS-based charge pump; diode voltage drop; micromechanical resonant switch; microscale mechanical charge pump; resoswitch; semiconductor technology; voltage 1 V; voltage 3 V; voltage 6 V; voltage 9 V; Breakdown voltage; CMOS integrated circuits; Charge pumps; Electrodes; Frequency measurement; Micromechanical devices; Transistors; MEMS; charge pump; high voltage; micromechanical; resonant mechanical switch; resonator; resoswitch;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location :
Kyoto
ISSN :
0743-1562
Print_ISBN :
978-1-4673-5226-0
Type :
conf
Filename :
6576636
Link To Document :
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