Title :
Degradation of time dependent variability due to interface state generation
Author :
Toledano-Luque, Maria ; Kaczer, Ben ; Franco, Jacopo ; Roussel, P.J. ; Bina, Markus ; Grasser, Tibor ; Cho, Moonju ; Weckx, Pieter ; Groeseneken, Guido
Author_Institution :
imec, Leuven, Belgium
Abstract :
We have experimentally demonstrated that interface charged traps represent a new source of variability to be considered in low doped channel devices. RTN amplitude and time-dependent BTI-induced variability in low doped pFETs is further aggravated by interface trap generation during operation.
Keywords :
field effect transistors; interface states; RTN amplitude; interface charged traps; interface state generation; interface trap generation; low doped channel devices; low doped pFET; time dependent BTI induced variability; time dependent variability; Degradation; Discharges (electric); FinFETs; Fluctuations; Interface states; Logic gates; Stress;
Conference_Titel :
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-5226-0
