Author :
Togo, Mitsuhiro ; Sasaki, Yutaka ; Zschatzsch, Gerd ; Boccardi, Guillaume ; Ritzenthaler, R. ; Lee, Jae W. ; Khaja, F. ; Colombeau, B. ; Godet, L. ; Martin, Patrick ; Brus, S. ; Altamirano, S.E. ; Mannaert, G. ; Dekkers, H. ; Hellings, Geert ; Horiguchi,
Abstract :
A novel Source Drain Extension (SDE) implantation (imp) technique and its CMOS mask flow were developed for scaled FinFETs. An Arsenic (As) heated imp was demonstrated as a superior n-type SDE doping technique for narrow fins. In order to apply the high temperature imp, the CMOS mask flow using an amorphous Carbon (α-C) was developed.
Keywords :
CMOS integrated circuits; MOSFET; carbon; ion implantation; masks; semiconductor doping; C; SDE imp technique; Scaled FinFETs; amorphous carbon CMOS mask flow; heated implantation; narrow fin; source drain extension implantation technique; superior n-type SDE doping technique; CMOS integrated circuits; Carbon; FinFETs; Heating; Resistors; Resists; Silicon;
