Title :
Scaling of Ω-gate SOI nanowire N- and P-FET down to 10nm gate length: Size- and orientation-dependent strain effects
Author :
Barraud, S. ; Coquand, R. ; Maffini-Alvaro, V. ; Samson, M.-P. ; Hartmann, J.-M. ; Tosti, L. ; Casse, M. ; Nguyen, Viet-Hung ; Triozon, Francois ; Niquet, Yann-Michel ; Tabone, C. ; Perreau, P. ; Allain, F. ; Vizioz, C. ; Comboroure, C. ; Aussenac, F. ; M
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
High-performance strained Silicon-On-Insulator (sSOI) nanowires (NW) with gate width (WNW) and length (LG) scaled down to 10nm are presented. For the first time, effectiveness of sSOI substrates is demonstrated for ultra-scaled N-FET NW (LG=10nm) with an outstanding ION current (ION=1420μA/μm at IOFF=300nA/μm) and an excellent electrostatic immunity (DIBL=82mV/V). P-FET NW performance enhancement is achieved using in-situ HCl+GeH4 etching and selective epitaxial growth of boron-doped Si0.7Ge0.3 for the formation of recessed Sources/Drains (S/D). We show an ION improvement up to +100% induced by recessed SiGe S/D for LG=13nm P-FET NW. Finally, size- and orientation-dependent strain impact on short channel performances is discussed. <;110> Si NWs provide the best opportunities for strain engineering.
Keywords :
Ge-Si alloys; elemental semiconductors; epitaxial growth; etching; field effect transistors; nanowires; silicon-on-insulator; Ω-gate SOI nanowire N-FET; Ω-gate SOI nanowire P-FET; P-FET NW performance enhancement; Si; Si0.7Ge0.3:B; boron-doped silicon germanium; electrostatic immunity; gate width; high-performance sSOI NW; high-performance strained silicon-on-insulator nanowires; in-situ etching; orientation-dependent strain effect; recessed source-drain formation; sSOI substrate effectiveness; selective epitaxial growth; short-channel performance; size 10 nm; size 13 nm; size-dependent strain effect; strain engineering; ultrascaled N-FET NW; Field effect transistors; Logic gates; Silicon; Silicon germanium; Tensile strain;
Conference_Titel :
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-5226-0
