Synthetic electric field tunnel FETs: Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel

Author

Morita, Yusuke ; Mori, Takayoshi ; Migita, S. ; Mizubayashi, W. ; Tanabe, A. ; Fukuda, Kenji ; Matsukawa, T. ; Endo, Kazuhiro ; O´uchi, S. ; Liu, Y.X. ; Masahara, M. ; Ota, Hiroyuki

Author_Institution

Green Nanoelectron. Center (GNC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2013

fDate

11-13 June 2013

Abstract

A synthetic electric field effect to enhance the tunnel FET (TFET) performances is proposed. The TFET utilizes both orthogonal and parallel electric fields induced by a wrapped gate electrode configuration. The device concept was experimentally verified by fabricating Si-TFETs integrated with ultrathin epitaxial channel. Scaling of both the channel width and channel thickness enhances the TFET performance owing to the enhanced synthetic electric field. The results predict that a fin-shape structure is promising for TFETs.

Keywords

electrodes; field effect transistors; silicon; tunnel transistors; Si; Si-TFET; drain current multiplication; fin-shape structure; orthogonal electric field; parallel electric field; synthetic electric field effect; synthetic electric field tunnel FET; ultrathin epitaxial channel; wrapped gate electrode configuration; Electric fields; Electrodes; Epitaxial growth; Field effect transistors; Junctions; Logic gates; Performance evaluation; orthogonal electric field; parallel electric field; tunnel FET; ultrathin channel; wrapped around gate;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2013 Symposium on

Conference_Location

Kyoto

ISSN

0743-1562

Print_ISBN

978-1-4673-5226-0

Type

conf

Filename

6576658