Title :
Performance of threshold switching in chalcogenide glass for 3D stackable selector
Author :
Sungho Kim ; Young-Bae Kim ; Kyung Min Kim ; Sae-Jin Kim ; Seung Ryul Lee ; Man Chang ; Eunju Cho ; Myoung-Jae Lee ; Dongsoo Lee ; Chang Jung Kim ; U-In Chung ; In-Kyeong Yoo
Author_Institution :
Samsung Adv. Inst. of Technol., Yongin, South Korea
Abstract :
The nature of threshold switching (TS) in AsTeGeSiN-based selector devices is comprehensively investigated. The scaling of the AC response is limited up to 5 ns due to a finite intrinsic delay time. An analytical model allows the accurate prediction of the TS nature, which can be merged to a numerical circuit simulation for providing essential guideline of the required selectivity performance.
Keywords :
arsenic compounds; chalcogenide glasses; germanium compounds; random-access storage; silicon compounds; tellurium compounds; three-dimensional integrated circuits; 3D stackable selector; AsTeGeSiN; AsTeGeSiN-based selector device; chalcogenide glass; finite intrinsic delay time; numerical circuit simulation; threshold switching; Analytical models; Arrays; Delays; Sensors; Switches; Voltage measurement;
Conference_Titel :
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-5226-0
