Bidirectional TaO-diode-selected, complementary atom switch (DCAS) for area-efficient, nonvolatile crossbar switch block

Author

Okamoto, K. ; Tada, Mitsunori ; Banno, N. ; Sakamoto, Takanori ; Miyamura, Makoto ; Iguchi, Noriyuki ; Nohisa, T. ; Hada, Hiromitsu

Author_Institution

Low-power Electron. Assoc. & Project (LEAP), Tsukuba, Japan

fYear

2013

fDate

11-13 June 2013

Abstract

For the first time, a novel area-efficient, 12F² crossbar switch block featuring a bidirectional TaO diode-selected, complementary atom switch (DCAS) with diagonal programming lines has been proposed. The compact BEOL-diode, having a high current rectification ratio of 1.7×10² with J_max=0.6MA/cm², enables three-terminal operation of the DCAS, realizing select-transistor-less programming and high off-state disturbance of the crossbar. The developed DCAS is a strong candidate for realizing a nonvolatile and low-power programmable logic.

Keywords

diodes; programmable logic devices; switches; tantalum compounds; DCAS; TaO; bidirectional TaO-diode-selected switch; compact BEOL-diode; complementary atom switch; diagonal programming line; high off-state disturbance; low-power programmable logic; nonvolatile crossbar switch block; nonvolatile programmable logic; select-transistor-less programming; CMOS integrated circuits; Logic gates; Programming; Reliability; Switches; Switching circuits; Transistors; Atom switch; Crossbar; Nonvolatile programmable logic;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2013 Symposium on

Conference_Location

Kyoto

ISSN

0743-1562

Print_ISBN

978-1-4673-5226-0

Type

conf

Filename

6576661