Record extrinsic transconductance (2.45 mS/µm at VDS = 0.5 V) InAs/In0.53Ga0.47As channel MOSFETs using MOCVD source-drain regrowth

Author

Lee, Sang-Rim ; Huang, Chien-Yi ; Carter, A.D. ; Elias, D.C. ; Law, Jeremy J. M. ; Chobpattana, Varistha ; Kramer, S. ; Thibeault, Brian J. ; Mitchell, W. ; Stemmer, Susanne ; Gossard, Arthur C. ; Rodwell, Mark J. W.

Author_Institution

ECE Dept., Univ. of California, Santa Barbara, Santa Barbara, CA, USA

fYear

2013

fDate

11-13 June 2013

Abstract

We report InAs/In_0.53Ga_0.47As channel MOSFETs using source-drain regrown contact and surface digital etching. A device with 40 nm-L_g shows 2.45 mS/μm extrinsic peak transconductance g_m at V_DS = 0.5 V and 214 Ω-μm R_on. A long-channel device (L_g = 510 nm) exhibits 1.06 mS/μm gm at V_DS = 0.5 V and 93 mV/dec at V_DS = 0.05 V. At all gate lengths, the devices exhibit the highest extrinsic g_m among published results on III-V MOSFETs and MOSHEMTs.

Keywords

III-V semiconductors; MOCVD; MOSFET; etching; gallium arsenide; indium compounds; wide band gap semiconductors; III-V MOSFET; InAs-In_0.53Ga_0.47As; MOCVD source-drain regrowth; MOSHEMT; channel MOSFET; extrinsic peak transconductance; long-channel device; source-drain regrown contact; surface digital etching; voltage 0.05 V; voltage 0.5 V; Etching; Gold; Logic gates; MOCVD; MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2013 Symposium on

Conference_Location

Kyoto

ISSN

0743-1562

Print_ISBN

978-1-4673-5226-0

Type

conf

Filename

6576662