Author :
Mitard, J. ; Witters, L. ; Vincent, B. ; Franco, Jacopo ; Favia, Paola ; Hikavyy, Andriy ; Eneman, Geert ; Loo, Roger ; Brunco, D.P. ; Kabir, N. ; Bender, Hugo ; Sebaai, Farid ; Vos, R. ; Mertens, P. ; Milenin, A. ; Vecchio, Emma ; Ragnarsson, Lars-Ake ;
Abstract :
Highly-strained Ge-in-STI pFETs on SiGe55% SRBs are demonstrated with mobilities up to 550 cm2/Vs and record NBTI reliability at TINV~1.7 nm. Short channel sGe pFET devices down to 35nm gate length are also reported. This work makes the first use of a germanide in contacts to solve void issues and a high Ge (75%) SiGe S/D for strain enhancement of mobility with an RMG flow providing module learning portable to FinFETs.
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; germanium; hole mobility; interconnections; negative bias temperature instability; FinFET; Ge; NBTI reliability; RMG flow; SiGe; SiGe SRB; germanided local interconnects; highly-strained Ge-in-STI pFET; short channel sGe pFET devices; strain enhancement; FinFETs; Logic gates; Metals; Silicon; Silicon germanium; Strain; Vehicles;
