• DocumentCode
    629173
  • Title

    Enhancement of high-Ns electron mobility in sub-nm EOT Ge n-MOSFETs

  • Author

    Lee, C.H. ; Lu, Chao ; Tabata, Takekazu ; Nishimura, T. ; Nagashio, K. ; Toriumi, A.

  • Author_Institution
    Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2013
  • fDate
    11-13 June 2013
  • Abstract
    This paper presents the peak mobility of 787 cm2/Vs and high-Ns mobility (@Ns=1013 cm-2) of 429 cm2/Vs in Ge n-MOSFETs with sub-nm EOT, which are the highest ones to date among scaled Si and Ge MOSFETs. This can be achieved by intermixing of Y atoms with GeO2, which offers the strong hygroscopic tolerance and thermal process stability as well as interface improvement.
  • Keywords
    MOSFET; electron mobility; germanium; Ge; MOSFET; equivalent oxide thickness; high electron mobility; interface improvement; peak mobility; subnanometer EOT; thermal process stability; Degradation; Electron mobility; Logic gates; MOSFET circuits; Oxidation; Silicon; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2013 Symposium on
  • Conference_Location
    Kyoto
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4673-5226-0
  • Type

    conf

  • Filename
    6576672
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=629173