DocumentCode :
629173
Title :
Enhancement of high-Ns electron mobility in sub-nm EOT Ge n-MOSFETs
Author :
Lee, C.H. ; Lu, Chao ; Tabata, Takekazu ; Nishimura, T. ; Nagashio, K. ; Toriumi, A.
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
fYear :
2013
fDate :
11-13 June 2013
Abstract :
This paper presents the peak mobility of 787 cm2/Vs and high-Ns mobility (@Ns=1013 cm-2) of 429 cm2/Vs in Ge n-MOSFETs with sub-nm EOT, which are the highest ones to date among scaled Si and Ge MOSFETs. This can be achieved by intermixing of Y atoms with GeO2, which offers the strong hygroscopic tolerance and thermal process stability as well as interface improvement.
Keywords :
MOSFET; electron mobility; germanium; Ge; MOSFET; equivalent oxide thickness; high electron mobility; interface improvement; peak mobility; subnanometer EOT; thermal process stability; Degradation; Electron mobility; Logic gates; MOSFET circuits; Oxidation; Silicon; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location :
Kyoto
ISSN :
0743-1562
Print_ISBN :
978-1-4673-5226-0
Type :
conf
Filename :
6576672
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=629173
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