Title :
Enhancement of hole mobility and cut-off characteristics of strained Ge nanowire pMOSFETs by using plasma oxidized GeOx inter-layer for gate stack
Author :
Ikeda, Ken-ichi ; Kamimuta, Y. ; Moriyama, Y. ; Ono, M. ; Usuda, Koji ; Oda, Masaomi ; Irisawa, T. ; Furuse, Kazutaka ; Tezuka, Taro
Author_Institution :
Collaborative Res. Team Green Nanoelectron. Center (GNC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
We demonstrate a record-high hole mobility ( μeff = 1922 cm2/Vs) of a Ge nanowire MOSFET using Al2O3/GeOx gate stacks having a metal (Schottky) source and drain structure employing doping-free processes. Inserting a plasma-oxide (GeOx) inter-layer between the high-k dielectric and the strained Ge nanowire channel greatly improved not only the mobility but the cut-off characteristics. High intrinsic Gmsat (1.21 mS/μm at Vd = -0.5V) and low off-current (2.7×10-9A/μm at Vd = -0.5V) were achieved for the device with the gate length of 45nm thanks to the reduced interface state density.
Keywords :
MOSFET; Schottky effect; aluminium compounds; germanium; germanium compounds; high-k dielectric thin films; hole mobility; nanowires; Al2O3-GeOx; Ge; Schottky source; cut off characteristic; gate stack; high hole mobility; high-k dielectric; hole mobility enhancement; metal source; pMOSFET; plasma oxidized interlayer; reduced interface state density; size 45 nm; strained nanowire; voltage -0.5 V; High K dielectric materials; Logic gates; MOSFET; Nanoscale devices; Strain; Very large scale integration; Wires;
Conference_Titel :
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-5226-0
