A new guard-ring technique to reduce coupling noise from through silicon via (TSV) utilizing inversion charge induced by interface charge

Author

Kyung-Do Kim ; Min-Kyu Jeong ; Sung-Min Cho ; Ho-Jung Kang ; Byung-Jun Jun ; Jae-Bum Kim ; Kang-Sik Choi ; Seon-Yong Cha ; Jung-Hoon Lee ; Jae-Goan Jeong ; Sung-Joo Hong ; Jong-Ho Lee

Author_Institution

Sch. of EECS & ISRC, Seoul Nat. Univ., Seoul, South Korea

fYear

2013

fDate

11-13 June 2013

Abstract

To reduce TSV coupling noise, a new guard-ring technique is proposed and implemented experimentally. We design the n⁺/n^- well guard-ring butted to the TSV dielectric surrounding the TSV and utilize the inversion layer induced by a positive interface charge as a shield layer. The interface trap density responsible for the interface charge between the TSV dielectric and Si substrate was extracted. Proposed technique reduces the coupling noise by ~3 times.

Keywords

elemental semiconductors; integrated circuit noise; interface states; three-dimensional integrated circuits; vias; Si; TSV coupling noise; TSV dielectric; guard-ring technique; interface trap density; inversion charge; inversion layer; positive interface charge; shield layer; silicon substrate; through silicon via; Capacitance-voltage characteristics; Couplings; Current measurement; Dielectrics; Noise; Substrates; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2013 Symposium on

Conference_Location

Kyoto

ISSN

0743-1562

Print_ISBN

978-1-4673-5226-0

Type

conf

Filename

6576679