Author :
Woo Chang Lim ; Lee, Y.J. ; Lee, Jang M. ; Kim, W.K. ; Kim, Ji H. ; Kim, Kwan Weon ; Kim, Kwang Soon ; Park, Y.S. ; Shin, Hee Jung ; Park, Sang Ho ; Kim, Ji H. ; Jeong, J.H. ; Kang, M.A. ; Kim, You Ho ; Kim, W.J. ; Kim, Soo Youn ; Cho, Y.C. ; Park, H.L. ;
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Hwasung, South Korea
Abstract :
We report enhanced switching margin in perpendicular MTJ cells at 20nm node. By introducing a novel structure with superior pinned layer stability, stable magnetization switching without magnetostatic interference has been achieved. Wide switching field margins over 40s have been secured for reproducible STT switching as well as a tightly controlled Hoffset below 100Oe. Switching voltage margin of the novel structure are also wide enough to show definite STT switching.
Keywords :
MRAM devices; interference; magnetostatics; stability; STT switching; magnetization switching; magnetostatic interference; perpendicular MTJ cells; perpendicular STT-MRAM; size 20 nm; superior pinned layer stability; switching margin enhancement; switching voltage margin; Magnetic multilayers; Magnetic switching; Magnetic tunneling; Magnetostatics; Perpendicular magnetic anisotropy; Stability analysis; Switches; MRAM; pinned layer stability; switching margin;
