Title :
Recovery dynamics and fast (sub-50ns) read operation with Access Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC)
Author :
Burr, Geoffrey W. ; Virwani, Kumar ; Shenoy, Rohit S. ; Fraczak, G. ; Rettner, Charles T. ; Padilla, Alexandra ; King, R.S. ; Nguyen, Khanh ; Bowers, A.N. ; Jurich, M. ; BrightSky, M. ; Joseph, Eric A. ; Kellock, A.J. ; Arellano, Noel ; Kurdi, Bulent N. ;
Author_Institution :
IBM Almaden Res. Center, San Jose, CA, USA
Abstract :
BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials[1-4] are shown to be capable of both maintaining and moving rapidly between all the roles necessary for 3D crosspoint memory (un-selected, half-selected, selected(read), and selected(write)). Ultra-low leakage is maintained over hours, recovery dynamics after both write (30-50uA) and read (3-6uA) operations are explored, and read operations fast enough for use with MRAM (sub-50ns) at low voltages are demonstrated.
Keywords :
random-access storage; 3D crosspoint memory; BEOL; Cu; MIEC material; MRAM; access device; current 3 muA to 6 muA; current 30 muA to 50 muA; mixed-ionic-electronic-conduction; read operation; recovery dynamics; Acceleration; Current measurement; Nonvolatile memory; Phase change materials; Stability analysis; Very large scale integration; Voltage control; Access device; MIEC; MRAM; NVM; PCM; RRAM;
Conference_Titel :
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-5226-0
