DocumentCode :
629195
Title :
Modeling RRAM set/reset statistics resulting in guidelines for optimized operation
Author :
Degraeve, Robin ; Fantini, Andrea ; Raghavan, N. ; Chen, Y.Y. ; Goux, L. ; Clima, S. ; Cosemans, S. ; Govoreanu, B. ; Wouters, D.J. ; Roussel, Philippe ; Kar, Gouri Sankar ; Groeseneken, Guido ; Jurczak, Malgorzata
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2013
fDate :
11-13 June 2013
Abstract :
The statistical properties of RRAM operation under various conditions can be quantitatively predicted by means of a modified and extended hourglass model. The intrinsic stochastic nature is controlled by the bottom vs. top reservoir symmetry. Guidelines for filament engineering are presented.
Keywords :
random-access storage; statistical analysis; stochastic processes; stochastic programming; RRAM set-reset statistics modeling; hourglass model; intrinsic stochastic nature; optimization; quantitative prediction; reservoir symmetry; Adaptation models; Hafnium compounds; Reservoirs; Resistance; Stochastic processes; Tin; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location :
Kyoto
ISSN :
0743-1562
Print_ISBN :
978-1-4673-5226-0
Type :
conf
Filename :
6576694
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=629195
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