DocumentCode :
629203
Title :
Top-pinned perpendicular MTJ structure with a counter bias magnetic field layer for suppressing a stray-field in highly scalable STT-MRAM
Author :
Iba, Yoshihisa ; Yoshida, Chikako ; Hatada, Akiyoshi ; Nakabayashi, Masaaki ; Takahashi, Asami ; Yamazaki, Yasuyuki ; Noshiro, Hideyuki ; Tsunoda, Koji ; Takenaga, Takashi ; Aoki, Masaki ; Sugii, Toshihiro
Author_Institution :
Low-power Electron. Assoc. & Project (LEAP), Tsukuba, Japan
fYear :
2013
fDate :
11-13 June 2013
Abstract :
We propose a new top-pinned perpendicular MTJ structure that can both achieve the magnetic stability of a pinned layer and reduce a magnetic stray-field to a free layer. The key point of the structure is that there is a large design margin of a pin configuration for the stray-field reduction due to a counter bias magnetic field layer being used instead of a SAF structure. Stable switching performances were successfully obtained without application of an external magnetic field in our 50nmF or less MTJs.
Keywords :
magnetic fields; magnetic tunnelling; random-access storage; MTJ; SAF; STT-MRAM; magnetic field layer; magnetic stability; magnetic stray-field; Magnetic field measurement; Magnetic fields; Magnetic multilayers; Magnetic resonance imaging; Magnetic tunneling; Magnetometers; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location :
Kyoto
ISSN :
0743-1562
Print_ISBN :
978-1-4673-5226-0
Type :
conf
Filename :
6576702
Link To Document :
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