Author :
Suzuki, Takumi ; Tanigawa, H. ; Kobayashi, Yoshiyuki ; Mori, Kazuo ; Ito, Yu ; Ozaki, Yoshito ; Suemitsu, K. ; Kitamura, Takamitsu ; Nagahara, K. ; Kariyada, E. ; Ohshima, Naoki ; Fukami, Shunsuke ; Yamanouchi, Masato ; Ikeda, Shoji ; Hayashi, Mariko ; Sa
Abstract :
We have developed magnetic domain wall (DW) motion cells with a perpendicularly magnetized CoFeB free layer and underlying hard magnets. Low current writing operation of 0.16 mA and a high MR ratio of 80% were attained for the 130-nm-wide free layer. Write/read operation for a 16kb array and high endurance features were also confirmed.
Keywords :
MRAM devices; cobalt compounds; iron compounds; magnesium compounds; magnetic tunnelling; permanent magnets; CoFeB-MgO; DW motion cells; MR ratio; current 0.16 mA; endurance feature; hard magnet; low current writing operation; low-current domain wall motion MRAM; magnetic domain wall motion cells; perpendicularly magnetized free layer; perpendicularly magnetized magnetic tunnel junction; size 130 nm; write-read operation; Arrays; Magnetic domain walls; Magnetic domains; Magnetic resonance imaging; Magnetic separation; Magnetic tunneling; Resistance;
