DocumentCode :
629660
Title :
Power reduction methodology in 28nm SOC production design — What have changed?
Author :
Kaijian Shi
Author_Institution :
Cadence Design Syst., Dallas, TX, USA
fYear :
2013
fDate :
20-21 June 2013
Firstpage :
1
Lastpage :
4
Abstract :
Device power characteristic changes significantly in 28nm CMOS technology. Consequently, some power reduction design methods that had been effective and successful in larger technology nodes become less effective or no longer useful in 28nm CMOS designs. This paper describes such changes in power reduction methods from production SOC design perspective.
Keywords :
CMOS integrated circuits; integrated circuit design; low-power electronics; system-on-chip; CMOS designs; device power characteristic; power reduction design methods; production SOC design perspective; size 28 nm; CMOS integrated circuits; CMOS technology; Logic gates; Optimization; Production; System-on-chip; Timing; 28nm SOC; design methodology; low power;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Faible Tension Faible Consommation (FTFC), 2013 IEEE
Conference_Location :
Paris
Print_ISBN :
978-1-4673-6105-7
Type :
conf
DOI :
10.1109/FTFC.2013.6577757
Filename :
6577757
Link To Document :
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