Title :
820-GHz imaging array using diode-connected NMOS transistors in 130-nm CMOS
Author :
Dae Yeon Kim ; Shinwoong Park ; Ruonan Han ; Kenneth, K.O.
Author_Institution :
Texas Analog Center of Excellence, Univ. of Texas at Dallas, Richardson, TX, USA
Abstract :
An 820-GHz 8×8 imaging array using diode-connected NMOS transistor detectors is demonstrated in 130-nm CMOS process. Measured mean responsivity of 3.4 kV/W and mean NEP of 28 pW/Hz1/2 at 1MHz modulation frequency are achieved. The NEP is 3.5X lower than that of NMOS and slightly lower than that of Schottky diode terahertz imaging arrays implemented in CMOS. The minimum NEP is 15.5 pW/Hz1/2, which is the lowest for THz detector arrays fabricated in CMOS. The imaging array occupies 2.0×1.7mm2 and the power consumption is 9.6 mW.
Keywords :
CMOS integrated circuits; MOSFET; Schottky diodes; CMOS; NEP; Schottky diode terahertz imaging array; THz detector array; diode-connected NMOS transistor; frequency 820 GHz; power 9.6 mW; size 130 nm; Arrays; CMOS integrated circuits; Detectors; Frequency measurement; Imaging; Noise; Schottky diodes; CMOS; THz imager; detector; diode-connected NMOS transistor;
Conference_Titel :
VLSI Circuits (VLSIC), 2013 Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-5531-5