• DocumentCode
    630043
  • Title

    820-GHz imaging array using diode-connected NMOS transistors in 130-nm CMOS

  • Author

    Dae Yeon Kim ; Shinwoong Park ; Ruonan Han ; Kenneth, K.O.

  • Author_Institution
    Texas Analog Center of Excellence, Univ. of Texas at Dallas, Richardson, TX, USA
  • fYear
    2013
  • fDate
    12-14 June 2013
  • Abstract
    An 820-GHz 8×8 imaging array using diode-connected NMOS transistor detectors is demonstrated in 130-nm CMOS process. Measured mean responsivity of 3.4 kV/W and mean NEP of 28 pW/Hz1/2 at 1MHz modulation frequency are achieved. The NEP is 3.5X lower than that of NMOS and slightly lower than that of Schottky diode terahertz imaging arrays implemented in CMOS. The minimum NEP is 15.5 pW/Hz1/2, which is the lowest for THz detector arrays fabricated in CMOS. The imaging array occupies 2.0×1.7mm2 and the power consumption is 9.6 mW.
  • Keywords
    CMOS integrated circuits; MOSFET; Schottky diodes; CMOS; NEP; Schottky diode terahertz imaging array; THz detector array; diode-connected NMOS transistor; frequency 820 GHz; power 9.6 mW; size 130 nm; Arrays; CMOS integrated circuits; Detectors; Frequency measurement; Imaging; Noise; Schottky diodes; CMOS; THz imager; detector; diode-connected NMOS transistor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits (VLSIC), 2013 Symposium on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4673-5531-5
  • Type

    conf

  • Filename
    6578708
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=630043