820-GHz imaging array using diode-connected NMOS transistors in 130-nm CMOS

An 820-GHz 8×8 imaging array using diode-connected NMOS transistor detectors is demonstrated in 130-nm CMOS process. Measured mean responsivity of 3.4 kV/W and mean NEP of 28 pW/Hz^1/2 at 1MHz modulation frequency are achieved. The NEP is 3.5X lower than that of NMOS and slightly lower than that of Schottky diode terahertz imaging arrays implemented in CMOS. The minimum NEP is 15.5 pW/Hz^1/2, which is the lowest for THz detector arrays fabricated in CMOS. The imaging array occupies 2.0×1.7mm² and the power consumption is 9.6 mW.