Title :
Application of low-noise TIA ICs for novel sensing of MOSFET noise up to the GHz region
Author :
Ohmori, Kenji ; Hasunuma, Ryu ; Yamamoto, Seiichi ; Tamura, Yoshinobu ; Hao Jiang ; Ishihara, Noboru ; Masu, Kazuya ; Yamada, Koji
Author_Institution :
Univ. of Tsukuba, Tsukuba, Japan
Abstract :
We have realized the characterization of MOSFET noise up to 3 GHz by locating a low-noise (LN) transimpedance amplifier (TIA) close to the devices to be tested (DUTs). A noise floor as low as 3 pA/vHz was achieved by using an external high-voltage input. Moreover, a high-frequency noise probe equipped with a TIA IC was fabricated, with which measurements in a frequency range up to 800 MHz were achieved for on-wafer MOSFETs with conventional test structures.
Keywords :
MOSFET; UHF amplifiers; UHF integrated circuits; analogue integrated circuits; low noise amplifiers; operational amplifiers; DUT; LN TIA IC; MOSFET noise sensing; high-frequency noise probe; low-noise transimpedance amplifier integrated circuit; on-wafer MOSFET; Floors; Frequency measurement; Integrated circuits; MOSFET; Noise; Noise measurement; Probes; MOSFET; TIA; noise; noise probe;
Conference_Titel :
VLSI Circuits (VLSIC), 2013 Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-5531-5
