Title :
Enhancing SRAM performance by advanced FinFET device and circuit technology collaboration for 14nm node and beyond
Author :
Endo, Kazuhiro ; O´uchi, Shin-ichi ; Matsukawa, T. ; Yongxun Liu ; Sakamoto, Kazumitsu ; Mizubayashi, W. ; Migita, S. ; Morita, Yusuke ; Ota, Hiroyuki ; Suzuki, Einoshin ; Masahara, M.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol, Nanoelectron. Res. Inst., Tsukuba, Japan
Abstract :
This paper presents a high performance and highly reliable SRAM realized by collaboration between advanced FinFET device and circuit technology. As for the device technology, the amorphous metal gate FinFET with the record smallest AVt value (=1.34 mVμm) are demonstrated. As for the circuit technology, it is demonstrated that both reliability and performance of SRAM are dramatically enhanced by introducing the independent-double-gate (IDG) FinFET.
Keywords :
MOSFET; SRAM chips; integrated circuit reliability; IDG; SRAM performance enhancement; advanced FinFET device; amorphous metal gate; circuit technology collaboration; independent-double-gate FinFET; size 14 nm; FinFETs; Logic gates; Noise; Performance evaluation; SRAM cells; Tin;
Conference_Titel :
VLSI Circuits (VLSIC), 2013 Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-5531-5
