Title :
Low frequency noise in silicon-based devices, circuits and systems
Author_Institution :
Electr. & Comput. Eng. Dept., McMaster Univ., Hamilton, ON, Canada
Abstract :
Silicon-based devices, circuits and systems are expected to continue to dominate the semiconductor and electronics industries in the near to medium-term. However, to maintain this dominance, several innovations have been made in fabrication technologies, material systems, device architecture, and circuit and system designs. While these innovations have helped to improve their large-signal properties and maintain reliability, often, the result in worse low-frequency noise properties. In this paper, we examine the impact of scaling, material systems used in device manufacture, new device architectures, sensors and sensor systems on the noise characteristics. Finally, from the applications perspective, the push to lower voltages for portable/mobile applications leads to the signal-to-noise dilemma which becomes more challenging with each new generation of scaled technologies.
Keywords :
MOSFET; network synthesis; semiconductor device reliability; MOSFET; circuit design; device architecture; electronics industry; fabrication technology; large-signal properties; low-frequency noise property; material systems; portable-mobile application; reliability; semiconductor industry; sensor systems; signal-to-noise ratio; silicon-based device; system design; Logic gates; MOSFET; Noise; Performance evaluation; Silicon; Silicon germanium; 3D device architectures; Low-frequency noise; noise dispersion; signal-to-noise ratio; silicon transistors;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578876