Random telegraph noise induced drain-current fluctuation during dynamic gate bias in Si MOSFETs

The influence of random telegraph noise (RTN) in MOSFETs on drain current (I_d) during transition edge of pulse gate voltage (V_g) was investigated. The I_d fluctuation under dynamic V_g was larger than that under de bias by a factor of 2.2. We have revealed that the initial trap occupation states before varying V_g significantly affect the I_d values during the transition edge of dynamic V_g. The trap occupation states were governed by the initial time and the profiles of RTN, e.g., the distribution of time constant (τ_c and τ_e). The I_d fluctuation under dynamic V_g can be controlled according to the profiles of RTN. These results provide useful information for designing an ultra-high speed circuit.