Title :
Accurate predictions of terahertz noise in ultra-small devices: A limiting factor for their practical application?
Author :
Oriols, X. ; Benali, Abderraouf ; Yaro, S.M. ; Albareda, G. ; Mateos, Javier ; Gonzalez, Temoatzin
Author_Institution :
Dept. d´Eng. Electron., Univ. Autonoma de Barcelona, Barcelona, Spain
Abstract :
With the aim of manufacturing faster devices, the electronic industry scales down device´s dimensions and is today entering into a nanoscale and Terahertz frequency regimes. In this work, we show how the reduction of the length L of the active region of two terminal devices implies (apart from the expected improvement of their dynamic behavior) a typically disregarded increment on the fluctuations of the current. In particular, the high-frequency current fluctuations are proportional to 1/L so that the noise grows unlimitedly when the device´s dimensions are reduced. This important drawback, common to classical and quantum regimes, remains mainly unnoticed by the scientific community.
Keywords :
nanoelectronics; terahertz wave devices; device dimensions; electronic industry; high-frequency current fluctuations; terahertz frequency regimes; terahertz noise; terminal devices; ultrasmall devices:; Histograms; Noise; Quantum computing; Standards; Switches; Trajectory; Transient analysis;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578886