Title :
Terahertz current noise in n+nn+ diodes
Author :
Mahi, Fatima Zohra ; Varani, Luca
Author_Institution :
Inst. of Technol., Univ. of Bechar, Bechar, Algeria
Abstract :
We present an analytical model for the calculation of the spectral density of current fluctuations in n+nn+ diodes at high frequency. The model takes into account the synchronous motion of the free carriers in each region of the structure, the so-called “returning” carriers and the plasma resonances at the n+n homojunctions. The current noise spectrum exhibits resonances in the terahertz domain which are discussed and analyzed for different total lengths of the diode and different materials.
Keywords :
current fluctuations; integrated circuit noise; semiconductor device models; semiconductor diodes; current fluctuations; free carriers; n+n homojunctions; n+nn+ diodes; plasma resonances; returning carriers; spectral density; synchronous motion; terahertz current noise; terahertz domain; Analytical models; Equations; Mathematical model; Noise; Plasmas; Resonant frequency; Semiconductor diodes;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578930
