Title :
Microplasmas avalanche breakdown as a diagnostic tool and reliability appreciating of the INGAN/GAN high-power LEDs
Author :
Vcleschuk, V.P. ; Vlasenko, A.I. ; Kisselvuk, M.P. ; Lyashenko, O.V.
Author_Institution :
V. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine
Abstract :
Microplasmas breakdown of the InGaN/GaN heterostructures of different types of high-power light-emitting diodes is studied. It is shown that microplasma parameters, connected with reliability and such fabricating technology of the InGaN/GaN heterostructures as substrate material - Al2O3, SiC or Si, which determines the density of the critical extended defects, light flux, homogeneity of current spreading.
Keywords :
III-V semiconductors; avalanche breakdown; gallium compounds; indium compounds; light emitting diodes; semiconductor device reliability; wide band gap semiconductors; InGaN-GaN; diagnostic tool; high-power LEDs; high-power light-emitting diodes; microplasma avalanche breakdown; reliability; Electroluminescence; Fluctuations; Gallium nitride; Light emitting diodes; Noise; Substrates; InGaN/GaN heterostructure; microplasmas breakdown;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578938
