Si nanowire field effect transistors: Effect of gamma radiation treatment

Author

Vitusevich, S. ; Li, Jie ; Pud, S. ; Offenhaeusser, A. ; Petrychuk, M. ; Danilchenko, B.

Author_Institution

Peter Grunberg Inst. Forschungszentrum Julich, Julich, Germany

fYear

2013

fDate

24-28 June 2013

Firstpage

1

Lastpage

4

Abstract

We report on the transport properties of Si nanowire (NWs) field effect transistor (FET) structures studied before and after gamma radiation treatment. Measured I-V characteristics and noise spectra of Si NW FETs of different lengths demonstrate improved stability and scaling after irradiation treatment. The results are interpreted with respect to strain relaxation in contact regions as well as changes in the charge states of dielectric traps after the influence of low doses of gamma irradiation. This approach is promising for nanoelectronic applications, including biosensors.

Keywords

electrical contacts; elemental semiconductors; field effect transistors; gamma-rays; nanoelectronics; nanowires; radiation hardening (electronics); semiconductor device noise; silicon; I-V characteristics; NW FET; Si; biosensor; contact region; dielectric trap; gamma irradiation treatment; gamma radiation treatment effect; nanoelectronic application; nanowire field effect transistor; noise spectra; stability; strain relaxation; Field effect transistors; Logic gates; Nanobioscience; Noise; Noise measurement; Radiation effects; Silicon; field effect transistors; gamma radiation treatment; nanowires; noise spectroscopy; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2013 22nd International Conference on

Conference_Location

Montpellier

Print_ISBN

978-1-4799-0668-0

Type

conf

DOI

10.1109/ICNF.2013.6578946

Filename

6578946