Title :
Si nanowire field effect transistors: Effect of gamma radiation treatment
Author :
Vitusevich, S. ; Li, Jie ; Pud, S. ; Offenhaeusser, A. ; Petrychuk, M. ; Danilchenko, B.
Author_Institution :
Peter Grunberg Inst. Forschungszentrum Julich, Julich, Germany
Abstract :
We report on the transport properties of Si nanowire (NWs) field effect transistor (FET) structures studied before and after gamma radiation treatment. Measured I-V characteristics and noise spectra of Si NW FETs of different lengths demonstrate improved stability and scaling after irradiation treatment. The results are interpreted with respect to strain relaxation in contact regions as well as changes in the charge states of dielectric traps after the influence of low doses of gamma irradiation. This approach is promising for nanoelectronic applications, including biosensors.
Keywords :
electrical contacts; elemental semiconductors; field effect transistors; gamma-rays; nanoelectronics; nanowires; radiation hardening (electronics); semiconductor device noise; silicon; I-V characteristics; NW FET; Si; biosensor; contact region; dielectric trap; gamma irradiation treatment; gamma radiation treatment effect; nanoelectronic application; nanowire field effect transistor; noise spectra; stability; strain relaxation; Field effect transistors; Logic gates; Nanobioscience; Noise; Noise measurement; Radiation effects; Silicon; field effect transistors; gamma radiation treatment; nanowires; noise spectroscopy; silicon;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578946
