DocumentCode :
630194
Title :
1/f Noise and G-r noise related to reliability in optoelectronic coupled devices
Author :
Yiqi Zhuang ; Junlin Bao
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´an, China
fYear :
2013
fDate :
24-28 June 2013
Firstpage :
1
Lastpage :
4
Abstract :
The reliability of Optocoupler devices is important since they provide an isolation from over-stress environmental conditions. In this paper, the electric ageing and Co-60 irradiation tests are performed on commercial optocouplers, and I-V characteristics and low-frequency noise are measured before and after the tests. It is found that the 1/f noise and g-r noise are more sensitive than conventional electric parameters, so the noise measurement can be used as an effective and non-destructive tool to evaluate the degradation of optocouplers. Based on the experimental results, in order to improve the validity of the approach, it is proposed to identify if the 1/f noise increases, observe if g-r noise exists, monitor output noise instead of input noise, and use the spectral magnitude instead of point-frequency or wide-band noise.
Keywords :
1/f noise; ageing; cobalt; light emitting diodes; opto-isolators; phototransistors; radiation effects; reliability; semiconductor device noise; 1/f noise; Co60; GaAs; current-voltage characteristic; electric ageing; g-r noise; irradiation test; low frequency noise; nondestructive tool; optocoupler degradation; optocoupler device reliability; optoelectronic coupled device reliability; Aging; Current measurement; Low-frequency noise; Noise measurement; Radiation effects; Reliability; 1/f noise; g-r noise; optoelectronic coupled devices; reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
Type :
conf
DOI :
10.1109/ICNF.2013.6578948
Filename :
6578948
Link To Document :
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