DocumentCode :
630206
Title :
Effect of substrate temperature deposition on the 1/f noise of Al-doped ZnO thin films
Author :
Barhoumi, A. ; Leroy, Gondy ; Carru, Jean-Claude ; Yang, Lei ; Gest, J. ; Guermazi, S.
Author_Institution :
Unite de Rech. de Phys. des Mater. Isolants et Semi-Isolants, Univ. de Sfax, Sfax, Tunisia
fYear :
2013
fDate :
24-28 June 2013
Firstpage :
1
Lastpage :
4
Abstract :
We have investigated the low-frequency noise and the sheet resistance of Al-doped ZnO thin films deposited by DC sputtering technique on glass substrate at different temperature. We characterized the noise below 100 kHz and obtained 1/f spectra. The 1/f noise normalized for bias, frequency and unit area, Cus is proportional with the sheet resistance Rsh· Sheet resistance decreases with the increasing of the substrate temperature Ts. The decrease of the normalized noise showed the improvement of the crystallinity and homogeneity of AZO thin films with Ts which indicates the sensitivity of the noise with the crystalline quality of the thin films.
Keywords :
1/f noise; II-VI semiconductors; semiconductor thin films; sputter deposition; wide band gap semiconductors; 1/f noise; 1/f spectra; AZO thin films; DC sputtering technique; ZnO:Al; crystalline quality; crystallinity improvement; glass substrate; homogeneity improvement; low-frequency noise; noise sensitivity; normalized noise; sheet resistance; substrate temperature deposition effect; Films; Noise; Noise measurement; Resistance; Sputtering; Substrates; Zinc oxide; 1/f noise; AZO; DC sputtering; thin films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
Type :
conf
DOI :
10.1109/ICNF.2013.6578974
Filename :
6578974
Link To Document :
بازگشت