Title :
Impurity-related noise in single-barrier GaAs/AlAs/GaAs resonant tunneling devices
Author :
Przybytek, J. ; Gryglas-Borysiewicz, M. ; Baj, M. ; Cavanna, A. ; Faini, G. ; Gennser, U. ; Ouerghi, A.
Author_Institution :
Fac. of Phys., Univ. of Warsaw, Warsaw, Poland
Abstract :
The low-frequency fluctuations of tunneling current in GaAs/AlAs/GaAs single-barrier heterostructure devices were measured for three samples with different Si-planar-doping in the center of 10.2 nm-thick barrier. The diameter of the mesas were close to 100 micrometers. Upon changes of the biasing voltage across the barrier the character of noise spectra also changed - depending on various electron transport mechanisms in the barrier. We emphasise that noise measurement is much more sensitive than simple current-voltage characteristics.
Keywords :
III-V semiconductors; aluminium compounds; electron transport theory; gallium arsenide; resonant tunnelling devices; semiconductor device measurement; semiconductor device noise; semiconductor doping; GaAs-AlAs-GaAs; Si-planar-doping; current-voltage characteristics; electron transport mechanism; impurity-related noise measurement; low-frequency fluctuation; noise spectra; single-barrier heterostructure device; single-barrier resonant tunneling device; size 10.2 nm; Current measurement; Gallium arsenide; Noise; Noise measurement; Resonant tunneling devices; Voltage measurement; generation-recombination noise; low-frequency noise; noise processes and phenomena; resonant tunnelling devices; shot noise; tunneling;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578979
