Evolution of low frequency noise and noise variability through CMOS bulk technology nodes

Author

Ioannidis, E.G. ; Haendler, S. ; Bajolet, A. ; Rosa, J. ; Manceau, J.-P. ; Dimitriadis, C.A. ; Ghibaudo, Gerard

Author_Institution

Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece

fYear

2013

fDate

24-28 June 2013

Firstpage

1

Lastpage

4

Abstract

In this paper, we present a thorough investigation of low frequency noise (LFN) and statistical noise variability through CMOS bulk technologies manufactured in STMicroelectronics along the past 12 years. The experimental results are well interpreted by the carrier number (CNF) with correlated mobility (CMF) fluctuation model. This enabled us to plot the evolution with time and technology generation of the oxide trap density N_t, as a function of equivalent oxide thickness EOT. It appears that, with the device miniaturization, N_t, has increased from 2×10¹⁶/eV/cm₃ up to 5-7×10¹⁷/eV/cm₃ when passing from EOT=12nm for 250nm node to EOT=1.4nm for 28nm node for n-MOS. Despite this increase of the mean trap density N_t, the LFN statistical variability has surprisingly been well controlled and even improved in 28nm node, emphasizing the progress in process control in such advanced technologies.

Keywords

CMOS integrated circuits; carrier mobility; statistical analysis; CMF fluctuation model; CMOS bulk technology nodes; CNF; EOT; LFN statistical variability; STMicroelectronics; carrier number; correlated mobility fluctuation model; equivalent oxide thickness; low frequency noise; mean trap density; n-MOS; noise variability; oxide trap density; process control; size 1.4 nm; size 250 nm; size 28 nm; statistical noise variability; CMOS integrated circuits; CMOS technology; Dielectrics; Fluctuations; Logic gates; Low-frequency noise; CMOS; low-frequency noise; statistical noise variability;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2013 22nd International Conference on

Conference_Location

Montpellier

Print_ISBN

978-1-4799-0668-0

Type

conf

DOI

10.1109/ICNF.2013.6578985

Filename

6578985