Title :
Evolution of low frequency noise and noise variability through CMOS bulk technology nodes
Author :
Ioannidis, E.G. ; Haendler, S. ; Bajolet, A. ; Rosa, J. ; Manceau, J.-P. ; Dimitriadis, C.A. ; Ghibaudo, Gerard
Author_Institution :
Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece
Abstract :
In this paper, we present a thorough investigation of low frequency noise (LFN) and statistical noise variability through CMOS bulk technologies manufactured in STMicroelectronics along the past 12 years. The experimental results are well interpreted by the carrier number (CNF) with correlated mobility (CMF) fluctuation model. This enabled us to plot the evolution with time and technology generation of the oxide trap density Nt, as a function of equivalent oxide thickness EOT. It appears that, with the device miniaturization, Nt, has increased from 2×1016/eV/cm3 up to 5-7×1017/eV/cm3 when passing from EOT=12nm for 250nm node to EOT=1.4nm for 28nm node for n-MOS. Despite this increase of the mean trap density Nt, the LFN statistical variability has surprisingly been well controlled and even improved in 28nm node, emphasizing the progress in process control in such advanced technologies.
Keywords :
CMOS integrated circuits; carrier mobility; statistical analysis; CMF fluctuation model; CMOS bulk technology nodes; CNF; EOT; LFN statistical variability; STMicroelectronics; carrier number; correlated mobility fluctuation model; equivalent oxide thickness; low frequency noise; mean trap density; n-MOS; noise variability; oxide trap density; process control; size 1.4 nm; size 250 nm; size 28 nm; statistical noise variability; CMOS integrated circuits; CMOS technology; Dielectrics; Fluctuations; Logic gates; Low-frequency noise; CMOS; low-frequency noise; statistical noise variability;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578985
